analog power AM4562C n & p-channel 60-v (d-s) mosfet v ds (v) i d (a) 7.2 6.5 5.9 5.3 symbol nch limit pch limit units v ds 60 -60 v gs 20 20 t a =25c 7.5 -4.2 t a =70c 5.9 -3.3 i dm 20 -20 i s 2.8 -2.5 a t a =25c 2.1 2.1 t a =70c 1.3 1.3 t j , t stg c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature 60 40 @ v gs = -10v 50 @ v gs = -4.5v product summary r ds(on) (m) 27 @ v gs = 10v 33 @ v gs = 4.5v -60 parameter drain-source voltage gate-source voltage absolute maximum ratings (t a = 25c unless otherwise noted) t <= 10 sec maximum junction-to-ambient a steady state r ja a w c/w parameter thermal resistance ratings continuous drain current a i d power dissipation a p d pulsed drain current b continuous source current (diode conduction) a operating junction and storage temperature range -55 to 150 v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? dc/dc conversion circuits ? motor drives so - 8 ? preliminary 1 publication order number: ds_AM4562C_1a
analog power AM4562C parameter symbol test conditions min typ max unit v ds = v gs , i d = 250 ua (nch) 1 v v ds = v gs , i d = -250 ua (pch) -1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 48 v, v gs = 0 v (nch) 1 v ds = -48 v, v gs = 0 v (pch) -1 v ds = 5 v, v gs = 10 v (nch) 9.5 a v ds = -5 v, v gs = -10 v (pch) -8 a v gs = 10 v, i d = 4.8 a (nch) 27 v gs = 4.5 v, i d = 3.8 a (nch) 33 v gs = -10 v, i d = -2.6 a (pch) 40 v gs = -4.5 v, i d = -2.1 a (pch) 50 v ds = 15 v, i d = 6 a (nch) 6 s v ds = -15 v, i d = -3.3 a (pch) 4 s i s = 1.4 a, v gs = 0 v (nch) 0.74 v i s = -1.25 a, v gs = 0 v (pch) -0.79 v total gate charge q g 8.9 gate-source charge q gs 2.5 gate-drain charge q gd 3.7 turn-on delay time t d(on) 5 rise time t r 6 turn-off delay time t d(off) 31 fall time t f 9 input capacitance c iss 1422 output capacitance c oss 84 reverse transfer capacitance c rss 79 total gate charge q g 18 gate-source charge q gs 7.5 gate-drain charge q gd 5.6 turn-on delay time t d(on) 12 rise time t r 9 turn-off delay time t d(off) 69 fall time t f 25 input capacitance c iss 2057 output capacitance c oss 151 reverse transfer capacitance c rss 92 on-state drain current a gate-source threshold voltage zero gate voltage drain current drain-source on-resistance a diode forward voltage a dynamic b nc n - channel v ds = 30 v, r l = 5 , i d = 6 a, v gen = 10 v, r gen = 6 ns static electrical characteristics forward transconductance a g fs v gs(th) i d(on) i dss r ds(on) v sd n - channel v ds = 30 v, v gs = 4.5 v, i d = 6 a p - channel v ds = -30 v, v gs = -4.5 v, i d = -3.3 a ua m m p - channel v ds = -15 v, v gs = 0 v, f = 1 mhz pf n - channel v ds = 15 v, v gs = 0 v, f = 1 mhz pf nc p - channel v ds = -30 v, r l = 9.1 , i d = -3.3 a, v gen = -10 v, r gen = 6 ns ? preliminary 2 publication order number: ds_AM4562C_1a
analog power AM4562C 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics - n-channel 0 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 rds(on) - on - resistance( ) id - drain current (a) 3v 4v,4.5v,6v,8v,10v 3.5v 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5v,4v 3.5v 3v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c tj = 25 c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 500 1000 1500 2000 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz 0 5 10 15 20 0 1 2 3 4 5 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c i d = 6a ? preliminary 3 publication order number: ds_AM4562C_1a
analog power AM4562C 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation typical electrical characteristics - n-channel 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient 0.01 0.1 1 10 100 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja 0.2 0.1 0.05 0.02 p( pk ) t 1 t 2 d = 0.5 single pulse t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) 0 2 4 6 8 10 0 5 10 15 20 vgs - gate - to - source voltage (v) qg - total gate charge (nc) r ja = 110 c /w i d = 6a v ds = 30v ? preliminary 4 publication order number: ds_AM4562C_1a
analog power AM4562C 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics - p-channel 1000 0 0.02 0.04 0.06 0.08 0.1 0 1 2 3 4 5 rds(on) - on - resistance( ) id - drain current (a) 4v 4.5v,6v,8v,10v 3.5v 0 1 2 3 4 5 0 0.1 0.2 0.3 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5 3.5v 4v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c 0 1 2 3 4 5 0 1 2 3 4 5 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz i d = - 3.3a ? preliminary 5 publication order number: ds_AM4562C_1a
analog power AM4562C 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation typical electrical characteristics - p-channel 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient 0.01 0.1 1 10 100 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja 0.2 0.1 0.05 0.02 p( pk ) t 1 t 2 d = 0.5 single pulse t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) 0 2 4 6 8 10 0 10 20 30 40 vgs - gate - to - source voltage (v) qg - total gate charge (nc) r ja = 110 c /w v ds = - 30v i d = - 3.3a ? preliminary 6 publication order number: ds_AM4562C_1a
analog power AM4562C package information note: 1. all dimension are in mm. 2. package body sizes exclude mold flash, protrusion or gate burrs. mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 3. package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 4. the package top may be smaller than the package bottom. 5. dimension "b" does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of "b" dimension at maximum material condition. the dambar cannot be located on the lower radius of the foot. ? preliminary 7 publication order number: ds_AM4562C_1a
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